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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 120N25P
VDSS = 250 V ID25 = 120 A RDS(on) 24 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
Maximum Ratings 250 250 20 30 120 75 300 60 60 2.5 10 700 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C C Features
l l
TO-264 (IXTK)
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
300 260
l
International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.13/10 Nm/lb.in. 10 g Advantages
l
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 200 25 250 19 24 V V nA A A m
l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99175E(12/05)
IXTK 120N25P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 50 70 8000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 220 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 33 130 33 185 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 80 S pF pF pF ns ns ns ns nC nC nC 0.18C/W 0.15 C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXTK) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 120 300 1.5 200 3.0 A A V ns C
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXTK 120N25P
Fig. 1. Output Characteristics @ 25C
120 110 100 90 VGS = 10V 9V 250 225 200 175 8V VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 6V 7V
150 125 100 75 50 25 0 0 2 4 6 6V 7V 8V
V D S - Volts Fig. 3. Output Characteristics @ 150C
120 110 100 90 VGS = 10V 9V 2.8 2.5 VGS = 10V
V D S - Volts
8
10
12
14
16
18
20
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
8V 7V
2.2 1.9 I D = 120A 1.6 1.3 1 0.7 0.4 I D = 60A
I D - Amperes
80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 5V 6V
V D S - Volts
6
7
8
-50
-25
0
TJ - Degrees Centigrade
25
50
75
100
125
150
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
3.8 3.4 TJ = 150C 90 80 70
Fig. 6. Drain Current vs. Case Tem perature
External Lead Current Limit
R D S ( o n ) - Normalized
3 2.6 2.2 1.8 1.4 1 0.6 0 30 60 90 VGS = 15V TJ = 25C VGS = 10V
I D - Amperes
60 50 40 30 20 10 0
I D - Amperes
120
150
180
210
240
270
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2006 IXYS All rights reserved
IXTK 120N25P
Fig. 7. Input Adm ittance
210 180 150 110 100 90 80 TJ = -40C 25C 150C
Fig. 8. Trans conductance
I D - Amperes
- Siemens
fs
70 60 50 40 30 20 10 0
120 90 60 30 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 TJ = 150C 25C -40C
g
0
30
60
90
120
150
180
210
V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage
350 300 250 10 9 8 7 V DS = 125V I D = 60A I G = 10m A
I D - A mperes Fig. 10. Gate Char ge
I S - Amperes
V G S - Volts
TJ = 150C TJ = 25C
200 150 100 50 0 0.2 0.4 0.6
6 5 4 3 2 1 0
V S D - V olts
0.8
1
1.2
1.4
1.6
0
20
40
60
80
G
100 120 140 160 180 200
Q
- nanoCoulombs
Fig. 11. Capacitance
10000 C is s 1000
Fig. 12. Forw ar d-Bias Safe Ope r ating Ar e a
R DS(on) Lim it
Capacitance - picoFarads
25s
I D - Amperes
100 100s 1m s 10 DC TJ = 175C 10m s
1000
C oss
f = 1MH z 100 0 5 10 15
C rs s 1 20 25 30 35 40 10
TC = 25C 100 1000
V DS - V olts
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 120N25P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01
0.00 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2006 IXYS All rights reserved

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